Thin film resistive layer Ta2N 100


PRODUCT SPECIFICATION


SUBSTRATE
Glass, Sital, Polished Ceramic, Ceramic as Fired, others on request

CONTACT
Ti + Pd + Au, TiW +Pd + Au, TiW + Au, others on request

SPECIFIED AREA
up to 3 mm to edge

RESISTOR VALUES
10 - 100 Ω / sq., others on request

UNIFORMITY OF FINAL SHEET RESISTIVITY
Annealing 2 h/350 C:

complete delivery:   ± 10% on ceramic
complete delivery:   ± 6% on glass
within batch:             ± 5%   on ceramic
within batch:             ± 3%   on glass

STABILITY, MAXIMUM RESISTIVE CHANGE
after 1.000 h at 125 °C:     < 0.05% on ceramic and glass
after 1.000 h at 150 °C:     < 0.08% on ceramic and glass
after 10.000 h at 125 °C:   < 0.10% on ceramic and glass
after 10.000 h at 150 °C:   < 0.15% on ceramic and glass

TEMPERATURE COEFFICIENT OF RESISTANCE
TCR within -55 °C to +150 °C:
absolute - ppm/°C:         -100 ± 10
tracking - ppm/(°C.cm):    < 3


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