Thin film metallization

Typical metallization systems

We offer following multilayer metallization systems for soldering and wire bonding

 

Substrate:

  • glass,
  • glass-ceramic (Sitall),
  • ceramics (polished or as fired),
  • silicon (other substrates possible on request)

Specified area:

  • up to 3 mm to edge
Typical multilayer metallizations
Attachment method
Processing temperature
Max. operating temperature
NiCr / Ni / Au

Soldering, wire bonding

250-400 °C 125 °C
Ti / Pd / Au

Soldering, wire bonding

300-400 °C

130 °C

TiW / Pd / Au
Soldering, wire bonding 300-400 °C

155 °C

TiW / Au
Wire bonding 350-400 °C

155 °C

Ti / Cu / Ni /Au
Soldering, wire bonding 300-400 °C

155 °C

*recommended annealing at least 1 h at 250 °C for stabilization
** Silver and Copper can be deposited instead of gold as a conductive layer, but processing temperatures are valid for Au top layers only and must be adjusted for other materials

 

Other metallization systems, including Aluminium metallization, are possible on request. See table of typical thickness for guidance:

 

The standard thickness of metallization layers
Material
Thickness (nm)
Tolerance
Complete delivery  Within the substrate
Ni
100 – 3000 ±10 ± 5
NiCr
100 – 200 ±15 ± 5
Ti
50 – 100 ±10 ± 5
TiW
25 – 100 ±10 ± 5
Pd
100 – 300 ±10 ± 5
Au
100 – 5000 ±10 ± 5
Ag
100 – 10000 ±10 ± 5
Cu
100 – 5000 ±10 ± 5
Al
100 – 15000 ±15 ± 5
AlSi
100 – 15000 ±15 ± 5
AlSiCu
100 – 15000 ±15 ± 5

Resistive layers

We also offer typical thin film resistive layers.

 

Substrate:

  • glass,
  • glass-ceramic (Sitall),
  • ceramics (polished or as fired),
  • silicon (other substrates possible on request)

Specified area:

  • up to 3 mm to edge

 

  NiCr Ta2N Cermet
Sheet resistance range

(Ω / sq)

12 – 200 10-100 600 – 1500
Annealing 2 h at 350 °C 2 h at 350 °C 2 h at 350 °C
Uniformity of final sheet resistance

complete delivery on smooth substrates

complete delivery on rough substrates

within batch on smooth substrates

within batch on rough substrates

 

10 %

15 %

3 %

6 %

 

6 %

10 %

3 %

5 %

 

10 %

15 %

3 %

6 %

Long term stability

after 1000 h at 125 °C

 

<0,15 %

 

< 0,05 %

 

< 0,14 %

Temperature coefficient of resistance (absolute)(ppm/°C)

temperature range
-55 to +150 °C

 ± 15  – 100 ± 10 ± 50
Temperature coefficient of resistance (tracking)(ppm/(°C.cm))

temperature range
-55 to +150 °C

< 5  < 3  < 5
Typical contact metallization Ni/Au,

Ti/Pd/Au,

TiW/Pd/Au,

TiW/Au

Ti/Pd/Au,

TiW/Pd/Au,

TiW/Au

NiCr/Ni/Au,

Cr/Ni/Au,

Ti/Pd/Au