THIN FILM METALLIZATION
High quality thin film metallization for soldering and wire bonding is our main product. It is based on multilayer contact systems consisting of an adhesive, barrier and conductive layer. Our metallization is characterized by excellent adhesion, stability and resistance against high temperatures.
We are able to deposit the metallization on all kind of substrates (see Materials and substrates page). But the most standard ones are the following:
- glass
- glass-ceramic
- ceramics (polished or as-fired)
- silicon
We offer following standard multilayer metallization systems for soldering and wire bonding:
Standard multilayer metallization
| Materials | Max. operating temperature | Contacting |
|---|---|---|
|
NiCr / Ni / Au |
125 °C |
soldering, wire bonding |
|
Ti / Pd / Au |
130 °C |
soldering, wire bonding |
|
TiW / Pd / Au |
155 °C |
soldering, wire bonding |
|
TiW / Au |
155 °C |
wire bonding |
|
Ti / Cu / Ni / Au |
155 °C |
soldering, wire bonding |
For all metallization systems we recommend annealing for at least 1 h at 250 °C for stabilization. Silver and Copper can be deposited instead of gold as a conductive layer. However, processing temperatures are valid for Au top layers only and must be adjusted for other materials.
Other metallization systems, including Aluminium metallization, are possible on request. See table of typical layer thicknesses for guidance:
The standard thickness of metallization layers
| Material | Thickness [nm] | Material | Thickness [nm] |
|---|---|---|---|
|
Ni |
100 - 3000 |
Ag |
100 - 10000 |
|
NiCr |
100 - 200 |
Cu |
100 - 5000 |
|
Ti |
50 - 100 |
Al |
100 - 15000 |
|
TiW |
25 - 100 |
AlSi |
100 - 15000 |
|
Pd |
100 - 300 |
AlSiCu |
100 - 15000 |
|
Au |
100 - 5000 |