THIN FILM METALLIZATION

High quality thin film metallization for soldering and wire bonding is our main product. It is based on multilayer contact systems consisting of an adhesive, barrier and conductive layer.  Our metallization is characterized by excellent adhesion, stability and resistance against high temperatures.

We are able to deposit the metallization on all kind of substrates (see our Materials and substrates page). But the most standard ones are the following:

  • glass,
  • glass-ceramic
  • ceramics (polished or as fired),
  • silicon

We offer following standard multilayer metallization systems for soldering and wire bonding:

Standard multilayer metallization

Materials Max. operating temperature Contacting

NiCr / Ni / Au

125 °C

soldering, wire bonding

Ti / Pd / Au

130 °C

soldering, wire bonding

TiW / Pd / Au

155 °C

soldering, wire bonding

TiW / Au

155 °C

wire bonding

Ti / Cu / Ni / Au

155 °C

soldering, wire bonding

For all metallization systems we recommend annealing for at least 1 h at 250 °C for stabilization. Silver and Copper can be deposited instead of gold as a conductive layer. However, processing temperatures are valid for Au top layers only and must be adjusted for other materials.

Other metallization systems, including Aluminium metallization, are possible on request. See table of typical layer thicknesses for guidance:

The standard thickness of metallization layers

Material Thickness [nm] Material Thickness [nm]

Ni

100 - 3000

Ag

100 - 10000

NiCr

100 - 200

Cu

100 - 5000

Ti

50 - 100

Al

100 - 15000

TiW

25 - 100

AlSi

100 - 15000

Pd

100 - 300

AlSiCu

100 - 15000

Au

100 - 5000